Heterojunction with Intrinsic thin-layer (HJT for short) solar modules are an efficient photovoltaic technology that combines the advantages of crystalline silicon and amorphous silicon Thin films. With their high conversion efficiency, low temperature coefficient and simplified manufacturing process, they have become a research hotspot in the photovoltaic field. The following is a detailed introduction the structure and working mechanism to the heterojunction:
1. Core structure :
N-type crystalline silicon substrate: As an absorption layer, it is usually high-purity monocrystalline silicon and has the advantages of low carrier lifetime and light-induced decay (LID).
Intrinsic amorphous silicon thin film (i-a-Si:H) : Deposited on both sides of the silicon wafer to passivate surface defects and reduce carrier recombination.
Doped amorphous silicon layers: P-type (front side) and N-type (back side) amorphous silicon layers form a heterojunction, constructing an integrated electric field to separate photogenerated carriers.
Transparent Conductive oxide (TCO) : Such as ITO, coated on an amorphous silicon layer, enhances lateral conductivity and reduces light reflection.
Metal gate electrode: Collects current, usually featuring a fine grid wire design with low light-blocking rate.
2. Working Mechanism :
After light irradiation, the silicon substrate absorbs photons to generate electron-hole pairs, which separate under the action of the built-in electric field and output current through the electrodes. The amorphous silicon layer passivates the surface and promotes carrier transport. The high open-circuit voltage (Voc) of the heterojunction is the key to efficiency improvement.
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