Amorphous silicon (a-Si) thin-film modules are a type of thin-film photovoltaic technology made from amorphous silicon materials. They are lightweight, flexible, and have good weak light response, making them suitable for a variety of application scenarios. The following will introduce the structure and process of amorphous silicon thin-film modules in detail:
1. Basic structure and working principle
A. Structural:
a. Substrate: Usually glass (rigid) or stainless steel/polymer (flexible).
b. Transparent conductive layer (TCO): Such as indium tin oxide (ITO) or fluorine-doped tin oxide (FTO), used to collect current and transmit light.
c. Amorphous silicon layer: Produced by plasma enhanced chemical vapor deposition (PECVD), with a thickness of only 1-2 microns.
d. PIN junction: Amorphous silicon is usually a sandwich structure (P-type layer-intrinsic layer-N-type layer), and the intrinsic layer (i layer) is the main light absorption.
e. Back electrode: Metal (such as aluminum) or composite layer, reflecting light to improve efficiency.
B. Working principle: Light excites electron-hole pairs in amorphous silicon, which separate to form current under the action of the built-in electric field (PIN junction).
2. Manufacturing process
A. Substrate cleaning: Ensure that the surface is free of contamination.
B. TCO deposition: Transparent conductive layer is prepared by magnetron sputtering or chemical vapor deposition (CVD).
C.. Amorphous silicon deposition:
a. PECVD process: Silane (SiH₄) and hydrogen (H₂) are introduced at low temperature (200-300°C) to form an amorphous silicon film through plasma decomposition.
b. Stacking design: To improve efficiency, multi-junction structures (such as a-Si/μc-Si stacking) can be deposited.
D. Back electrode produce: Sputtering or evaporation of metal layer.
E. Encapsulation: EVA film and backsheet are used for lamination protection.
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